? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1100 v v dgr t j = 25 c to 150 c, r gs = 1m 1100 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 24 a i dm t c = 25 c, pulse width limited by t jm 100 a i a t c = 25 c 20a e as t c = 25 c2j dv/dt i s i dm , v dd v dss , t j 150 c 15 v/ns p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 v~ f c mounting force 50..200 / 11..45 n/lb. weight 8 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1100 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 20a, note 1 290 m polar tm hiperfet tm power mosfet MMIX1F40N110P v dss = 1100v i d25 = 24a r ds(on) 290m t rr 300ns ds100431(01/12) n-channel enhancement mode avalanche rated fast intrinsic rectifier features z silicon chip on direct-copper bond (dcb) substrate z isolated substrate - excellent thermal transfer - increased temperature and power cycling capability - high isolation voltage (2500 v~) z low intrinsic gate resistance z low package inductance z fast intrinsic rectifier z low r ds(on) and q g advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z pulse power applications z discharge circuits in lasers pulsers, spark igniters, rf generators z dc-dc converters z dc-ac inverters advance technical information (electrically isolated tab) g d s isolated tab d s g g = gate d = drain s = source
MMIX1F40N110P ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 20a, note 1 20 32 s c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1070 pf c rss 46 pf r gi gate input resistance 1.65 t d(on) 53 ns t r 55 ns t d(off) 110 ns t f 54 ns q g(on) 310 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 20a 95 nc q gd 142 nc r thjc 0.25 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 40 a i sm repetitive, pulse width limited by t jm 160 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 2.2 c i rm 16.0 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 20a r g = 1 (external) i f = 20a, -di/dt = 100a/ s v r = 100v, v gs = 0v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2012 ixys corporation, all rights reserved MMIX1F40N110P fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 0123456789101112 v ds - volts i d - amperes v gs = 10v 8 v 9 v 7 v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9 v 8 v 7 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 v ds - volts i d - amperes 7 v 8v 6v v gs = 10v 9v fig. 4. r ds(on) normalized to i d = 20a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 40a i d = 20a fig. 5. r ds(on) normalized to i d = 20a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 1020304050607080 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 28 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
MMIX1F40N110P ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 5.05.56.06.57.07.58.08.59.0 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 q g - nanocoulombs v gs - volts v ds = 550v i d = 20a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.01 0.1 1 10 100 1000 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 10ms r ds(on) limit 1ms 100ms dc 25s
? 2012 ixys corporation, all rights reserved ixys ref: f_40n110p(97)12-15-11-a MMIX1F40N110P fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. maximum transient thermal impedance 0.4
MMIX1F40N110P ixys reserves the right to change limits, test conditions, and dimensions. pin: 1 = gate 5-12 = source 13-24 = drain
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